Flexible low-voltage organic thin-film transistors and circuits based on C10-DNTT

Autor:	Jan Blochwitz-Nimoth, Myeong Jin Kang, Ute Zschieschang, Hagen Klauk, Ansgar Werner, Tobias Canzler, Tsuyoshi Sekitani, Takao Someya, Kazuo Takimiya
Rok vydání:	2012
Předmět:	Materials science Dopant business.industry Transistor Gate dielectric General Chemistry Capacitance law.invention Organic semiconductor Thin-film transistor law Materials Chemistry Optoelectronics business Low voltage Electronic circuit
Zdroj:	J. Mater. Chem.. 22:4273-4277
ISSN:	1364-5501 0959-9428
DOI:	10.1039/c1jm14917b
Popis:	Using the recently developed organic semiconductor, 2,9-didecyldinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (C10-DNTT), we have fabricated organic thin-film transistors and ring oscillators on flexible polymeric substrates. By utilizing a gate dielectric with a small thickness (5.3 nm) and a large capacitance (800 nF cm−2), the transistors can be operated with relatively low voltages of about 2 to 3 V. To improve the charge exchange between the organic semiconductor and the gold source and drain contacts, a thin layer of a non-alkylated organic semiconductor (DNTT) sandwiched between two thin layers of a strong organic dopant (NDP-9) was inserted between the C10-DNTT and the gold contacts. The optimized transistors have a field-effect mobility of 4.3 cm2 V−1 s−1, an on/off current ratio of 108, and a subthreshold swing of 68 mV per decade. The ring oscillators have a signal propagation delay of 5 μs per stage at a supply voltage of 3 V, making these the fastest organic circuits at supply voltages below 7 V reported to date.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1dc32aa00afdda8484c5ac23d4164314 https://doi.org/10.1039/c1jm14917b Zobrazit plný text záznamu