Phonon-assisted electronic transitions in phosphorus-doped n-type chemical vapor deposition diamond films
| Autor: | Lambert Stals, T Teraji, Etienne Gheeraert, Ken Haenen, Gilbert Knuyt, Kristien Meykens, S Koizumi, Milos Nesladek |
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| Rok vydání: | 2001 |
| Předmět: |
Photothermal spectroscopy
Chemistry Mechanical Engineering Photoconductivity Doping Analytical chemistry Diamond General Chemistry Electronic structure Chemical vapor deposition engineering.material Electronic Optical and Magnetic Materials Materials Chemistry engineering Electrical and Electronic Engineering Fourier transform infrared spectroscopy Spectroscopy |
| Zdroj: | Diamond and Related Materials. 10:439-443 |
| ISSN: | 0925-9635 |
| Popis: | One year ago we published the first results on the electronic structure of the P-level in 1000 ppm PH3/CH4 doped {111}-oriented n-type diamond films, using the quasi-steady-state photocurrent technique (PC) and photothermal ionization spectroscopy (PTIS). In this work we have extended our measurements at various temperatures (4.2–77.4 K) to samples with various doping levels (100, 500 and 1000 ppm PH3/CH4). This allowed us to obtain more precise results for the electronic structure of the phosphorus defect in homoepitaxial n-type CVD diamond films, making use of the 155 meV LO-phonon to explain the oscillatory photoconductivity. These results are confirmed by the PTIS maxima and Fourier transform infra-red (FTIR) data. In addition we present first measurements on a 2000-ppm doped {100}-oriented sample. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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