Parallel Integration of Nanoscale Atomic Layer Deposited Ge2Sb2Te5 Phase-Change Memory with an Indium Gallium Zinc Oxide Thin-Film Transistor

Autor: Wonho Choi, Gilseop Kim, Hyun Young Kim, Chanyoung Yoo, Jeong Woo Jeon, Byongwoo Park, Gwangsik Jeon, Sangmin Jeon, Sukin Kang, Yonghee Lee, Cheol Seong Hwang
Rok vydání: 2023
Předmět:
Zdroj: ACS Applied Electronic Materials. 5:1721-1729
ISSN: 2637-6113
DOI: 10.1021/acsaelm.2c01757
Databáze: OpenAIRE