Controlled growth of 3C‐SiC and 6H‐SiC films on low‐tilt‐angle vicinal (0001) 6H‐SiC wafers

Autor:	J. A. Powell, L. G. Matus, Wolfgang J. Choyke, J. B. Petit, M. Yoganathan, James H. Edgar, J. W. Yang, L. L. Clemen, I. G. Jenkins, Pirouz Pirouz
Rok vydání:	1991
Předmět:	Tilt (optics) Materials science Physics and Astronomy (miscellaneous) Mineralogy Crystal growth Wafer Substrate (electronics) Chemical vapor deposition Composite material Epitaxy Vicinal Stacking fault
Zdroj:	Applied Physics Letters. 59:333-335
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.105587
Popis:	We have found that, with proper pregrowth surface treatment, 6H‐SiC single‐crystal films can be grown by chemical vapor deposition (CVD) at 1450 °C on vicinal (0001) 6H‐SiC with tilt angles as small as 0.1°. Previously, tilt angles of greater than 1.5° were required to achieve 6H on 6H at this growth temperature. In addition, 3C‐SiC could be induced to grow within selected regions on the 6H substrate. The 3C regions contained few (or zero) double‐positioning boundaries and a low density of stacking faults. A new growth model is proposed to explain the control of SiC polytype in this epitaxial film growth process.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1da1c77bf097ec4cb7f4ca357c70a823 https://doi.org/10.1063/1.105587 Zobrazit plný text záznamu