Opening of aligned carbon nanotube ends via room-temperature sputter etching process
| Autor: | Li-Han Chen, Joseph F. Aubuchon, Andrew I. Gapin, Sungho Jin |
|---|---|
| Rok vydání: | 2005 |
| Předmět: |
Nanotube
Materials science Physics::Instrumentation and Detectors General Physics and Astronomy Nanotechnology Sputter deposition Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Computer Science::Other Condensed Matter::Materials Science Chemical engineering Physics::Plasma Physics Sputtering Etching (microfabrication) Carbon nanotube supported catalyst Dry etching Reactive-ion etching Plasma processing |
| Zdroj: | Journal of Applied Physics. 97:124310 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.1946199 |
| Popis: | Top ends of aligned carbon nanotubes were opened via room-temperature sputter etching of the nanotubes in the same chemical-vapor deposition (CVD) chamber that the nanotubes were grown. The mechanism of the sputter etching process involves incident positive ions in the plasma, such as hydrogen or argon, colliding with the nanotube material and preferentially eroding the nanotube walls around the catalyst metal particles. The cut-off nanotube segments are removed from the sample in the CVD chamber together with the catalyst particles. This process is entirely physical in nature with no wet chemical processing steps involved. The sputter etching process is found to be faster with larger ion size, higher applied voltage forming the plasma, and higher pressure of the sputtering gas. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|