Growth investigations of 1.3 μm GaInAsP/InP MQW laser diodes grown by chemical beam epitaxy

Autor:	H. P. Meier, P.M. Epperlein, A. Jakubowicz, W. Walter, S. Hausser, R.F. Broom
Rok vydání:	1993
Předmět:	Threshold current Chemistry business.industry Multiple quantum Heterojunction Condensed Matter Physics Laser Chemical beam epitaxy law.invention Inorganic Chemistry Wavelength Optics law Materials Chemistry business Diode
Zdroj:	Journal of Crystal Growth. 127:165-168
ISSN:	0022-0248
DOI:	10.1016/0022-0248(93)90597-p
Popis:	We report on growth investigations and results of low threshold current density GaInAsP/InP multiple quantum well (MQW) lasers emitting at a wavelength of 1.3 μm. Bulk layers and separate confinement heterostructure MQW laser diodes were grown by chemical beam epitaxy. At optimized growth conditions, broad-area lasers with as low a threshold current density J th as 160 A/cm 2 and an internal loss of 5 cm -1 were obtained
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1d9daaf7862b9ccb66a6928a9907a99f https://doi.org/10.1016/0022-0248(93)90597-p Zobrazit plný text záznamu