Low-Voltage-Driven Pentacene Thin-Film Transistors with Cross-Linked Poly(4-vinylphenol)/High-k Bi5Nb3O15 Hybrid Dielectric for Phototransistor
| Autor: | Sang Ii Shin, Sahn Nahm, Byeong Kwon Ju, Seung-Jun Lee, Kyung Hoon Cho, Jae Hong Kwon, Myung Ho Chung, Seongpil Chang, Ki Young Dong, Tae Yeon Oh |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
business.industry Gate dielectric Biomedical Engineering Bioengineering General Chemistry Dielectric Condensed Matter Physics Organic semiconductor Pentacene chemistry.chemical_compound chemistry Thin-film transistor Poly-4-vinylphenol Optoelectronics General Materials Science business Low voltage High-κ dielectric |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 12:3355-3359 |
| ISSN: | 1533-4899 1533-4880 |
| DOI: | 10.1166/jnn.2012.5640 |
| Popis: | This paper describes the fabrication of pentacene thin-film transistors (TFTs) with an organic/inorganic hybrid gate dielectric, consisting of cross-linked poly(4-vinylphenol) (PVP) and Bi5Nb3O15. A 300-nm-thick Bi5Nb3O15 dielectric film, grown at room temperature, exhibits a high dielectric constant (high-k) value of 40 but has an undesirable interface with organic semiconductors (OSC). To form better interfaces with OSC, a cross-linked PVP dielectric was stacked on the Bi5Nb3O15 dielectric. It is shown that, with the introduction of a hybrid dielectric, our devices not only can be operated at a low voltage (- -5 V) but also have improved electrical characteristics and photoresponse, including a field-effect mobility of 0.72 cm2/V x s, current sub-threshold slopes of 0.29 V/decade, and a photoresponse of 4.84 at a gate bias V(G) = 0 V under 100 mW/cm2 AM 1.5 illumination. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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