Numerical modelling of Czochralski growth of quadratic silicon crystals by means of a travelling magnetic field

Autor:	Peter Rudolph, M. Czupalla, Ch. Frank-Rotsch, Wolfram Miller
Rok vydání:	2011
Předmět:	Convection Materials science Silicon Field (physics) Condensed matter physics chemistry.chemical_element General Chemistry Condensed Matter Physics law.invention Magnetic field Crystal Temperature gradient Crystallography chemistry law Thermal General Materials Science Czochralski process
Zdroj:	Crystal Research and Technology. 47:285-292
ISSN:	0232-1300
DOI:	10.1002/crat.201100494
Popis:	We present 3D simulations of melt flow in a Czochralski process of Si single crystal growth with a travelling magnetic field (TMF). The choice of the TMF significantly influences the thermal field in the melt. Using a downwards TMF field the induced convection causes a thermal field with a low radial component of the temperature gradient along the melt surface and a high vertical component below the crystal. Such a thermal field allows the kinetics-based creation of {110} side facets, which was proven in several experimental runs. (© 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze:	OpenAIRE
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