Modeling of the gate leakage current reduction in MOSFET with ultra-thin nitrided gate oxide
| Autor: | T. Y. Lin, Ming-Fang Wang, Shyh-Fann Ting, C.H. Yu, Yean-Kuen Fang, Mong-Song Liang, W. D. Wang, Liang-Gi Yao, Mo-Chiun Yu, S. C. Chen, Chia-Lin Chen, C. H. Chen, Chih-Wei Yang |
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| Rok vydání: | 2003 |
| Předmět: |
Materials science
business.industry Electrical engineering Oxide Equivalent oxide thickness Time-dependent gate oxide breakdown Condensed Matter Physics Electronic Optical and Magnetic Materials PMOS logic chemistry.chemical_compound chemistry Gate oxide MOSFET Materials Chemistry Optoelectronics Electrical and Electronic Engineering business NMOS logic Leakage (electronics) |
| Zdroj: | Solid-State Electronics. 47:751-754 |
| ISSN: | 0038-1101 |
| DOI: | 10.1016/s0038-1101(02)00357-x |
| Popis: | The origins of different gate leakage behaviors for both PMOS and NMOS with ultra-thin nitrided gate oxide have been studied and modeled. Both equivalent oxide thickness (EOT) and barrier lowering are affected the gate leakage. In NMOS with nitrided oxide, the advantage of EOT decrease is larger to offset the barrier lowering, thus improvement on gate current reduction rate ( R J g ). The situation in PMOS is just contrary to the NMOS, therefore the gate leakage increased with increasing nitridation time. We attribute this to the different barrier lowering in conduction band and valence band. |
| Databáze: | OpenAIRE |
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