Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning
Autor: | Kenta Arima, Katsuyoshi Endo, Jun Katoh |
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Rok vydání: | 2004 |
Předmět: |
geography
Materials science geography.geographical_feature_category Physics and Astronomy (miscellaneous) Silicon Analytical chemistry Wet cleaning chemistry.chemical_element Atomic units law.invention Terrace (geology) chemistry Etching (microfabrication) law Ultrapure water Wafer Scanning tunneling microscope |
Zdroj: | Applied Physics Letters. 85:6254-6256 |
ISSN: | 1077-3118 0003-6951 |
DOI: | 10.1063/1.1840108 |
Popis: | Atomically resolved scanning tunneling microscopy observations are performed on hydrogen-terminated Si(110) surfaces after wet cleaning. When a Si(110) wafer is dipped into dilute HF-containing solution, the surface is constructed by piling small terraces and steps. When the sample is consequently rinsed with ultrapure water, some characteristic features such as a zig–zag chain inside a terrace, a single row at step edges and an isolated zig–zag chain on a terrace are clearly observed, and their atomic arrangements are determined. Excessive rinsing, however, creates the ridge-shaped structure of nanometer height, which is explained by anisotropic etching by OH− ions in water. |
Databáze: | OpenAIRE |
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