Atomic-scale analysis of hydrogen-terminated Si(110) surfaces after wet cleaning

Autor: Kenta Arima, Katsuyoshi Endo, Jun Katoh
Rok vydání: 2004
Předmět:
Zdroj: Applied Physics Letters. 85:6254-6256
ISSN: 1077-3118
0003-6951
DOI: 10.1063/1.1840108
Popis: Atomically resolved scanning tunneling microscopy observations are performed on hydrogen-terminated Si(110) surfaces after wet cleaning. When a Si(110) wafer is dipped into dilute HF-containing solution, the surface is constructed by piling small terraces and steps. When the sample is consequently rinsed with ultrapure water, some characteristic features such as a zig–zag chain inside a terrace, a single row at step edges and an isolated zig–zag chain on a terrace are clearly observed, and their atomic arrangements are determined. Excessive rinsing, however, creates the ridge-shaped structure of nanometer height, which is explained by anisotropic etching by OH− ions in water.
Databáze: OpenAIRE
načítá se...