Anomaly in Sputtering on Titanium Nitride Film Growth by Post-Irradiation Processing*1

Autor:	Ryuichi Shimizu, Siegfried Hohmann, Yosuke Suzuki, Masahiko Inoue, Riichirou Mitsuhashi, Kyung–youl Min
Rok vydání:	1996
Předmět:	Reflection high-energy electron diffraction General Engineering Analytical chemistry General Physics and Astronomy Mineralogy Nitride Titanium nitride Ion chemistry.chemical_compound chemistry Electron diffraction Sputtering Irradiation Thin film
Zdroj:	Japanese Journal of Applied Physics. 35:221
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.35.221
Popis:	We have developed an ultrahigh-vacuum (UHV) apparatus which enables reflection high-energy electron diffraction (RHEED), sputtering yield measurement and ion scattering spectroscopy (ISS) to be performed simultaneously, leading to a more comprehensive understanding of the growth mechanism of titanium nitride (TiN) film by post-irradiation processing. The sputtering yield measurement revealed an anomalous sputtering phenomenon in the initial stage of post-irradiation processing, i.e., sputtering hardly took place on a titanium film under 3 keV N2 + ion irradiation for doses below ∼5×1015 ions/cm2. Further N2 + ion irradiation led to a low sputtering yield for doses between ∼5×1015 ions/cm2 to ∼3×1016 ions/cm2, and finally approached a steady-state sputtering for doses above ∼3×1016 ions/cm2. Monitoring of the surface composition was also performed by ISS to examine whether the surface composition follows the change of the sputtering behavior or not.
Databáze:	OpenAIRE
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