Heavy Ion SEU Test Data for 32nm SOI Flip-Flops

Autor:	J. A. Maharrey, R. C. Quinn, T. D. Loveless, J. D. Rowe, Jeffrey S. Kauppila, Lloyd W. Massengill, K. Lilja, Michael W. McCurdy, Bharat L. Bhuva, En Xia Zhang, Michael L. Alles, Robert A. Reed, M. Bounasser, W.T. Holman
Rok vydání:	2015
Předmět:	Engineering business.industry Clock rate Electrical engineering Silicon on insulator Dice Hardware_PERFORMANCEANDRELIABILITY FLOPS Upset Logic gate Hardware_INTEGRATEDCIRCUITS Electronic engineering business Beam (structure) Hardware_LOGICDESIGN Test data
Zdroj:	2015 IEEE Radiation Effects Data Workshop (REDW).
Popis:	Two 32nm SOI single-event upset test chips have been irradiated at LBNL and TAMU heavy ion test facilities. The test chips include unhardened and RHBD designs such as DICE, LEAP DICE, and stacking devices. SEU cross-section data are presented for the hardened and unhardened flip-flop designs across test facility, beam tune, angle of incidence, and clock frequency.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1d6daa6fd1f861e8506d37dee9355c06 https://doi.org/10.1109/redw.2015.7336712 Zobrazit plný text záznamu