High quality InxGa1-xN thin films with x > 0.2 grown on silicon

Autor:	Wladek Walukiewicz, Joel W. Ager, Vincent M. Kao, Iulian Gherasoiu, Lothar A. Reichertz, Kin Man Yu, M. Hawkridge
Rok vydání:	2010
Předmět:	Photoluminescence Silicon business.industry Doping Analytical chemistry chemistry.chemical_element Mineralogy Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor chemistry Thin film business Deposition (law) Indium Molecular beam epitaxy
Zdroj:	physica status solidi (b). 247:1747-1749
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.200983462
Popis:	Using plasma-assisted molecular beam epitaxy (PA-MBE), high quality InxGa1-xN layers with x in the range from 25 to 31% have been grown on silicon (111) substrates. The polarity of the layers has been found to impact the incorporation of In, with Ga polar buffers promoting the deposition of uniform composition InGaN. We have achieved films with indium fraction up to 31% and rocking curve width of 538 arcsec. Residual donor concentration as low as approximately 1.2 x 10(exp 18) cm(exp -3) was measure in these films, suggesting that p-type doping with Mg can be achieved. The presence of AlN layers and the increasing thickness of the GaN buffer do not appear to have a significant contribution to the series resistance of the structure. The investigation of the InGaN layers by X-ray diffraction did not reveal any significant phase separation occurring during the MBE deposition although the photoluminescence spectrum exhibits low energy features that would require further investigation.
Databáze:	OpenAIRE
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