Dissolution Inhibition in Cu-CMP Using Dodecyl-Benzene-Sulfonic Acid Surfactant with Oxalic Acid and Glycine as Complexing Agents
Autor: | Suryadevara V. Babu, Dipankar Roy, Charan V. V. S. Surisetty, P.C. Goonetilleke |
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Rok vydání: | 2008 |
Předmět: |
chemistry.chemical_classification
Renewable Energy Sustainability and the Environment Oxalic acid Inorganic chemistry Sulfonic acid Condensed Matter Physics Electrochemistry Surfaces Coatings and Films Electronic Optical and Magnetic Materials Dielectric spectroscopy chemistry.chemical_compound chemistry Pulmonary surfactant Chemical-mechanical planarization Materials Chemistry Dissolution Fumed silica Nuclear chemistry |
Zdroj: | Journal of The Electrochemical Society. 155:H971 |
ISSN: | 0013-4651 |
DOI: | 10.1149/1.2987791 |
Popis: | This work demonstrates that the anionic surfactant, dodecyl-benzene-sulfonic acid (DBSA), is an effective dissolution inhibitor in chemical mechanical planarization (CMP) of Cu. Material removal rates were measured employing slurries, with and without DBSA, containing an oxidizer H 2 O 2 and glycine, oxalic acid (OA), or a glycine-OA mixture as the complexing agent. Polishing was performed at a down-pressure of 2 psi using fumed silica particles. The OA-based slurries supported chemically dominant material removal, which would be useful for processing structures containing fragile low-k dielectrics, and, unlike certain other anionic surfactants, DBSA provided effective surface protection in these systems. Optical profilometry showed that blanket Cu-wafer surfaces, polished with DBSA, were noticeably defect-free. The glycine-OA mixed-complexing-agent system in combination with DBSA yielded most satisfactory results, showing effective suppression of Cu dissolution (∼0 nm/min), as well as providing substantial polish rates with good postpolish surface finish. Considerations for postpolishing cleaning of DBSA were explored using contact-angle measurements. The electrochemical techniques of dc polarization and ac Fourier transform impedance spectroscopy were employed to examine the surface chemistries of a rotating-disk Cu electrode under polishing conditions at 40°C in the absence and in the presence of DBSA. |
Databáze: | OpenAIRE |
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