Fabrication and characterization of low cost Cu 2 O/ZnO:Al solar cells for sustainable photovoltaics with earth abundant materials
| Autor: | Andreas Waag, Andrey Bakin, Johannes Ledig, Azat Sharafeev, V. Marín-Borrás, Mohsen Mohamed Mosaad, Abdelhamid El-Shaer, Alexander Wagner, Mahmoud Abdelfatah, Peter Lemmens |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Renewable Energy Sustainability and the Environment business.industry Open-circuit voltage Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Surfaces Coatings and Films Electronic Optical and Magnetic Materials law.invention Optics Depletion region law Photovoltaics 0103 physical sciences Solar cell Optoelectronics Quantum efficiency Thin film 0210 nano-technology business Short circuit |
| Zdroj: | Solar Energy Materials and Solar Cells. 145:454-461 |
| ISSN: | 0927-0248 |
| Popis: | The low cost electrodeposition method was used to grow Cu2O thin films and experimentally determine the optimal absorber layer thickness. Raman scattering studies indicate the presence of solely crystalline Cu2O and SEM images show that the thin films consist of grains with a pyramidal shape. The influence of the thickness of the light absorbing Cu2O layer on the basic characteristic of the heterojunction and their properties have been investigated using reflectivity, current–voltage (J–V), capacitance–voltage (C–V) and the external quantum efficiency (EQE) measurements. The depletion layer, the charge collection length of the minority carrier, and reflectivity are the main factors describing the device properties. The efficiency of 1.09% with an open circuit voltage of Voc=0.35 V, a short circuit current density Jsc=6.21 mA cm−2 and a filling factor of FF=50% was obtained as the highest value for our solar cells. A Gaussian fit shows that the film thickness of around 3 µm is an optimum with respect to a high efficiency of the solar cells. C–V measurements shows that the estimated value of the built-in potential is Vb=0.35 V and the acceptor concentration at the junction is NA=4.375×1016 cm−3 for solar cell with the highest efficiency. |
| Databáze: | OpenAIRE |
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