Solution of a New Molecular Structure{[SnClGe(SiC3H9)3]4}by Simulated Annealing

Autor:	R. A. Geanangel, Y.-S. Chen, S. P. Mallela, W.-P. Su
Rok vydání:	1997
Předmět:	Crystal Structural Biology Chemical physics Chemistry Stereochemistry Direct methods Yield (chemistry) Simulated annealing Molecule Crystal structure Stoichiometry
Zdroj:	Acta Crystallographica Section A Foundations of Crystallography. 53:396-399
ISSN:	0108-7673
Popis:	A crystal is known to possibly contain Sn, Ge, Si, C, Cl and H but the precise stoichiometry is unknown. In addition, the crystal seems to be highly disordered. The X-ray data did not yield to conventional direct methods. The structure has been solved by employing simulated annealing. The methodology involved is presented.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1d508af361582b058958cc93d9ce2327 https://doi.org/10.1107/s0108767397002766 Zobrazit plný text záznamu Plný text