Identification of the Native Vacancy Defects in Both Sublattices ofZnSxSe1−xby Positron Annihilation
| Autor: | Arto Salokatve, Petteri Uusimaa, Kimmo Saarinen, K. Skog, K. Rakennus, M. Pessa, P. Hautojärvi, T. Laine, Jari Mäkinen |
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| Rok vydání: | 1996 |
| Předmět: | |
| Zdroj: | Physical Review Letters. 77:3407-3410 |
| ISSN: | 1079-7114 0031-9007 |
| DOI: | 10.1103/physrevlett.77.3407 |
| Popis: | We show how positron annihilation can distinguish vacancies in the different sublattices of a binary compound by performing experiments in ${\mathrm{ZnS}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$ layers. We identify the Se vacancies $({V}_{\mathrm{Se}})$ in N-doped and the Zn vacancies $({V}_{\mathrm{Zn}})$ in Cl-doped material by the shape of the core electron momentum distribution. The charge of the defect involving ${V}_{\mathrm{Se}}$ is neutral or negative in $p\ensuremath{-}\mathrm{t}\mathrm{y}\mathrm{p}\mathrm{e}$ ${\mathrm{ZnS}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$, suggesting that ${V}_{\mathrm{Se}}$ is complexed with an acceptor. The concentration of the ${V}_{\mathrm{Se}}$ complexes is high $(\ensuremath{\ge}{10}^{18}{\mathrm{cm}}^{\ensuremath{-}3})$, indicating that their role is important in the electrical compensation of $p\ensuremath{-}\mathrm{t}\mathrm{y}\mathrm{p}\mathrm{e}$ ${\mathrm{ZnS}}_{x}{\mathrm{Se}}_{1\ensuremath{-}x}$. |
| Databáze: | OpenAIRE |
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