Investigation of DC Hot-Carrier Degradation at Elevated Temperatures for n-Channel Metal–Oxide–Semiconductor Field-Effect-Transistor of 0.13 µm Technology
| Autor: | Tien−Fu Lei, Joe Ko, Hung-Wen Chen, Jung−Chun Lin, Hung−Chuan Lin, Heng−Sheng Haung, Sam Chou, Ze−Wei Jhou, Shuang-Yuan Chen |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) business.industry Transistor General Engineering General Physics and Astronomy Substrate (electronics) law.invention Metal Reliability (semiconductor) Gate oxide law visual_art visual_art.visual_art_medium Optoelectronics Degradation (geology) Field-effect transistor Current (fluid) business |
| Zdroj: | Japanese Journal of Applied Physics. 45:3144-3146 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.1143/jjap.45.3144 |
| Popis: | In this study, n-channel metal–oxide–semiconductor field-effect transistors (nMOSFETs) having 20 and 32 A gate oxide thicknesses of 0.13 µm technology were used to investigate DC hot-carrier reliability at elevated temperatures up to 125 °C. The research also focused on the degradation of analog properties after hot-carrier injection. On the basis of the results of experiments, the hot-carrier degradation of Id,op (drain current defined on the basis of analog applications) is found to be the worst case among those of three types of drain current from room temperature to 125 °C. This result should provide valuable insight to analog circuit designers. As to the reverse temperature effect, the substrate current (Ib) commonly accepted as the parameter for monitoring the drain-avalanche-hot-carrier (DAHC) effect should be modified since the drain current (Id) degradation and Ib variations versus temperature have different trends. For the devices having a gate oxide thinner than 20 A, we suggest that the worst condition in considering hot-carrier reliability should be placed at elevated temperatures. |
| Databáze: | OpenAIRE |
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