Modification of band alignments and optimization of electrical properties of InGaZnO MOS capacitors with high-k HfOxNy gate dielectrics
| Autor: | J.G. Lv, Z.Q. Sun, S.S. Jiang, P. Jin, Gang He, J. Gao, Mulong Liu, C.Y. Zheng, W.D. Li, J.W. Zhang, D.Q. Xiao, Xi-Bao Chen |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry Band gap Mechanical Engineering Metals and Alloys 02 engineering and technology Dielectric 021001 nanoscience & nanotechnology 01 natural sciences Band offset Amorphous solid law.invention Capacitor Mechanics of Materials Thin-film transistor law 0103 physical sciences Materials Chemistry Optoelectronics Electrical measurements 0210 nano-technology business High-κ dielectric |
| Zdroj: | Journal of Alloys and Compounds. 679:115-121 |
| ISSN: | 0925-8388 |
| DOI: | 10.1016/j.jallcom.2016.04.025 |
| Popis: | High- k HfO x N y and HfO 2 have been applied to amorphous InGaZnO ( a -IGZO) metal–oxide–semiconductor (MOS) capacitors as high-k gate dielectrics by using radio-frequency sputtering at room temperature. Effects of nitrogen incorporation on the optical band gap, band alignment and electrical properties of HfO x N y /IGZO/Si gate stacks have been systematically investigated by spectroscopic ellipsometry (SE), UV–vis spectroscopy, x-ray photoemission spectroscopy (XPS) and electrical measurements. Experimental results have confirmed the successful incorporation of nitrogen into HfO 2 films and reduction in band gap with the incorporation of nitrogen for HfO x N y thin films. Reduction in valence band offset and increase in conduction band offset have been observed for HfO x N y /IGZO gate stack. Electrical properties measurements for a -IGZO MOS capacitors based on HfO x N y gate dielectrics have indicated that nitrogen incorporation leads to the improved interface quality, increased dielectric constant, reduced hysteresis voltage, and decreased leakage current density. Meanwhile, the leakage current mechanism under gate injection for MOS capacitors based on HfO 2 and HfO x N y high-k gate dielectrics has been investigated systematically. |
| Databáze: | OpenAIRE |
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