An indirect interband tunneling formulation for an arbitrary electric field direction in semiconductors
| Autor: | Sumio Tanaka |
|---|---|
| Rok vydání: | 1995 |
| Předmět: |
Valence (chemistry)
Condensed matter physics Phonon business.industry Chemistry Coordinate system Wannier equation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor Electric field Materials Chemistry Electrical and Electronic Engineering Electronic band structure business Quantum tunnelling |
| Zdroj: | Solid-State Electronics. 38:1017-1023 |
| ISSN: | 0038-1101 |
| Popis: | Indirect interband tunneling theory for a specified electric field direction due to Tanaka has been extended to an arbitrary electric field direction. The Wannier equation is solved in the newly defined coordinate system such that one of the coordinate axes is parallel to the arbitrary electric field direction, to obtain the envelope functions of the valence and conduction bands in the absence of perturbation originating from electron-phonon interaction. The tunneling current density is expressed in terms of the effective masses of the valence and conduction bands defined in the new coordinate system. The transition probability calculation by the time-dependent perturbation imposes the momentum conservation on the phonon vector, which is dependent on the band structure but is independent of the electric field direction. The formulation is applied to a drain leakage current in silicon MOSFETs for three typical surfaces. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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