Autor: |
P. Dubček, U. V. Desnica, Mark C Ridgway, Christopher Glover, Sigrid Bernstorff, I.D. Desnica-Frankovic |
Rok vydání: |
2006 |
Předmět: |
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Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:114-117 |
ISSN: |
0168-583X |
DOI: |
10.1016/j.nimb.2006.03.093 |
Popis: |
Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74 Ge, from 3 × 10 12 cm −2 to 3 × 10 16 cm −2 ; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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