GISAXS studies of structural modifications in ion-beam amorphized Ge

Autor: P. Dubček, U. V. Desnica, Mark C Ridgway, Christopher Glover, Sigrid Bernstorff, I.D. Desnica-Frankovic
Rok vydání: 2006
Předmět:
Zdroj: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:114-117
ISSN: 0168-583X
DOI: 10.1016/j.nimb.2006.03.093
Popis: Grazing incidence small angle scattering of X-rays (GISAXS) was used to analyze structural modifications in implantation-damaged Ge. Samples were implanted by different doses of 74 Ge, from 3 × 10 12 cm −2 to 3 × 10 16 cm −2 ; at room- or liquid nitrogen-temperature, respectively. We have found that the micro-structure in amorphous Ge, continuously and consistently evolves as a function of ion dose but differs according to the implantation temperature. In RT-samples small vacancy nanoclusters agglomerate in the end-of-range region of implanted layer even before complete amorphization. With higher doses nanoclusters increase and coalesce into nano-voids. For the highest dose, the onset of porosity is confirmed. On the other hand, in LN-implanted samples, the clustering-related signal is much weaker and evolves more slowly.
Databáze: OpenAIRE