A 28nm High- k/Metal-gate Symmetric 10T 2RW Dual-port SRAM bitcell design

Autor:	M. Yabuuchi, S. Tanaka, T.Y. Lu, M. Tanaka, Y. Sawada, Yuichiro Ishii, Y.T. Kuo, C.C. Lung, O. Cheng, S.S. Chen, C.H. Huang, Koji Nii
Rok vydání:	2017
Předmět:	Materials science business.industry Optoelectronics Port (circuit theory) Static random-access memory business Dual (category theory) High-κ dielectric
Zdroj:	Extended Abstracts of the 2017 International Conference on Solid State Devices and Materials.
DOI:	10.7567/ssdm.2017.g-6-02
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1d3e8be938eb5c32b5cc5c928ebdad7f https://doi.org/10.7567/ssdm.2017.g-6-02 Zobrazit plný text záznamu