Growth and characterization of In1-xGaxAs/InAs0.65Sb0.35 strained layer superlattice infrared detectors
| Autor: | John E. Scheihing, Joshua M. Duran, Narae Yoon, Elizabeth H. Steenbergen, Daniel Wasserman, Gamini Ariyawansa, Charles J. Reyner |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Electron mobility Materials science business.industry Superlattice 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound Gallium antimonide chemistry 0103 physical sciences Optoelectronics Quantum efficiency Infrared detector Indium arsenide 0210 nano-technology business Indium gallium arsenide Dark current |
| Zdroj: | Infrared Technology and Applications XLIII. |
| ISSN: | 0277-786X |
| DOI: | 10.1117/12.2262579 |
| Popis: | Type-II strained layer superlattices (SLS) are an active research topic in the infrared detector community and applications for SLS detectors continue to grow. SLS detector technology has already reached the commercial market due to improvements in material quality, device design, and device fabrication. Despite this progress, the optimal superlattice design has not been established, and at various times has been believed to be InAs/GaSb, InAs/InGaSb, or InAs/InAsSb. Building on these, we investigate the properties of a new mid-wave infrared SLS material: InGaAs/InAsSb SLS. The ternary InGaAs/InAsSb SLS has three main advantages over other SLS designs: greater support for strain compensation, enhanced absorption due to increased electron-hole wavefunction overlap, and improved vertical hole mobility due to reduced hole effective mass. Here, we compare three ternary SLSs, with approximately the same bandgap (0.240 eV at 150 K), comprised of Ga fractions of 5%, 10%, and 20% to a reference sample with 0% Ga. Enhanced absorption is both theoretically predicted and experimentally realized. Furthermore, the characteristics of ternary SLS infrared detectors based on an nBn architecture are reported and exhibit nearly state-of-the-art dark current performance with minimal growth optimization. We report standard material and device characterization information, including dark current and external quantum efficiency, and provide further analysis that indicates improved quantum efficiency and vertical hole mobility. Finally, a 320×256 focal plane array built based on the In0.8Ga0.2As/InAs0.65Sb0.35 SLS design is demonstrated with promising performance. |
| Databáze: | OpenAIRE |
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