Two causes of source/drain series resistance in bottom-contact pentacene thin-film transistors

Autor:	Makoto Noda, Nobuhide Yoneya, Noriyuki Kawashima, Kazumasa Nomoto, Masaru Wada, Nobukazu Hirai, Jiro Kasahara
Rok vydání:	2004
Předmět:	Materials science Equivalent series resistance business.industry Transistor Adhesion law.invention Pentacene chemistry.chemical_compound chemistry Thin-film transistor law Monolayer Electrode Optoelectronics business Layer (electronics)
Zdroj:	MRS Proceedings. 814
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-814-i4.4
Popis:	We identified two causes of source/drain (S/D) series resistance (Rs) in bottom-contact (BC) pentancene thin-film transistors (TFTs). One is mixed-phase pentacene grown in the blurred- edge region of Au electrodes and the other is the semi-insulating pentacene region between the Au electrode and the carrier-accumulating layer. A novel Au S/D electrode structure with a self-assembled monolayer (SAM) adhesion layer enables direct injection of carriers into the accumulating layer and markedly reduces Rs for unit gate width (RsW) to 6 Mωμ[.proportional]m. BC TFTs with this electrode structure showed extrinsic field-effect mobility as high as 1.1 cm2/Vs.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1d32413bf8aba87832edafdc4e079225 https://doi.org/10.1557/proc-814-i4.4 Zobrazit plný text záznamu Full text from SpringerLink