Modeling of NBTI Using BAT Framework: DC-AC Stress-Recovery Kinetics, Material, and Process Dependence
| Autor: | Souvik Mahapatra, Narendra Parihar |
|---|---|
| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Physics Negative-bias temperature instability Condensed matter physics Silicon Dimension (graph theory) chemistry.chemical_element Silicon on insulator Germanium 01 natural sciences Electronic Optical and Magnetic Materials Silicon-germanium Threshold voltage chemistry.chemical_compound chemistry 0103 physical sciences Content (measure theory) Electrical and Electronic Engineering Safety Risk Reliability and Quality |
| Zdroj: | IEEE Transactions on Device and Materials Reliability. 20:4-23 |
| ISSN: | 1558-2574 1530-4388 |
| DOI: | 10.1109/tdmr.2020.2967696 |
| Popis: | Threshold voltage shift ( $\Delta \text{V}_{\mathrm{ T}}$ ) due to Negative Bias Temperature Instability (NBTI) in p-MOSFETs is modeled using the BTI Analysis Tool (BAT) framework. The $\Delta \text{V}_{\mathrm{ T}}$ time kinetics during and after DC and AC stress at different stress ( $\text{V}_{\mathrm{ GSTR}}$ ) and recovery ( $\text{V}_{\mathrm{ GREC}}$ ) biases, temperature (T), pulse duty cycle (PDC) and frequency ( ${f}$ ) is modeled. The influences of Nitrogen content (N%) in the gate insulator stack, Germanium content (Ge%) in the channel, and mechanical strain due to dimension scaling and layout are explained. The framework is used to analyze measured data from planar, Fully Depleted Silicon on Insulator (FDSOI) and FinFET devices having Silicon (Si) and Silicon Germanium (SiGe) channels. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|