Development of nc-Si based intrinsic layer for HIT solar cells by ion-beam sputtering
| Autor: | M. Dusheiko, Valerii Ganus, Mykola Semenenko, Nickolai Klyui, Mykhailo Dusheiko |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science business.industry Nanocrystalline silicon 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Monocrystalline silicon chemistry.chemical_compound chemistry Sputtering 0103 physical sciences Electronic engineering Degradation (geology) Optoelectronics NC-SI 0210 nano-technology business Layer (electronics) Common emitter |
| Zdroj: | 2016 IEEE 36th International Conference on Electronics and Nanotechnology (ELNANO). |
| DOI: | 10.1109/elnano.2016.7493037 |
| Popis: | In this paper the method of ion-beam sputtering was applied to produce nanocrystalline silicon (nc-Si) for emitter and intrinsic layers. Nanocrystalline silicon is more stable over time by reducing the degradation under the Staebler-Wronski effect than amorphous silicon. Reduction of surface recombination on the interface between "c-Si/nc-Si" was achieved by forming of nanocrystalline silicon via the ion-beam sputtering. |
| Databáze: | OpenAIRE |
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