Impact of Double HZO on Ferroelectric FinFET and 1T Memory Application

Autor:	Yun-Fang Chung, Shu-Tong Chang
Rok vydání:	2022
Zdroj:	2022 IEEE Silicon Nanoelectronics Workshop (SNW).
DOI:	10.1109/snw56633.2022.9889052
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1d15f2a15deea50e9aaceecf87082c6b https://doi.org/10.1109/snw56633.2022.9889052 Zobrazit plný text záznamu