| Autor: |
Oleg E. Tereshchenko, Konstantin A. Kokh, A.S. Kozhukhov, Igor P. Prosvirin, Sergey V. Makarenko, V. A. Golyashov, Viktor V. Atuchin |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
2011 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices Proceedings. |
| DOI: |
10.1109/edm.2011.6006896 |
| Popis: |
The surface stability of single crystals Bi 2 Se 3 and Bi 2 Te 3 has been studied by XPS, AFM, STM and RHEED techniques. The Bi 2 Se 3 and Bi 2 Te 3 single crystals were grown by vertical Bridgman method. Crystal cleaving induced atomically flat surfaces over 1 cm2 area. XPS revealed that cleaved Bi 2 Se 3 and Bi 2 Te 3 surface were stable to oxidation over two months. The surfaces are sufficiently inert to obtain STM atomic resolution even in two weeks after cleaved. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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