Carbonized tantalum catalysts for catalytic chemical vapor deposition of silicon films
| Autor: | Can Li, Tong Ren, Huiping Gao, Pinliang Ying, Shimin Cheng |
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| Rok vydání: | 2012 |
| Předmět: |
inorganic chemicals
Materials science Silicon Carbonization organic chemicals Inorganic chemistry Metals and Alloys Tantalum chemistry.chemical_element Surfaces and Interfaces Atmospheric temperature range Surfaces Coatings and Films Electronic Optical and Magnetic Materials Catalysis chemistry X-ray crystallography Materials Chemistry heterocyclic compounds Surface layer Thin film |
| Zdroj: | Thin Solid Films. 520:5155-5160 |
| ISSN: | 0040-6090 |
| Popis: | Catalytic chemical vapor deposition (Cat-CVD) has been demonstrated as a promising way to prepare device-quality silicon films. However, catalyst ageing due to Si contamination is an urgency to be solved for the practical application of the technique. In this study, the effect of carbonization of tantalum catalyst on its structure and performance was investigated. The carbonized Ta catalyst has a TaC surface layer which is preserved over the temperature range between 1450 and 1750 °C and no Si contamination occurs on the catalyst after long-term use. Si film prepared using the carbonized Ta catalyst has a similar crystal structure to that prepared by uncarbonized Ta catalyst. Formation of the TaC surface layer can alleviate the ageing problem of the catalyst, which shows great potential as a stable catalyst for Cat-CVD of Si films. |
| Databáze: | OpenAIRE |
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