Observation of current filaments in IGBTs with thermoreflectance microscopy
| Autor: | Hans-Joachim Schulze, Riteshkumar Bhojani, Dustin Kendig, Franz-Josef Niedernostheide, Jens Kowalsky, Roman Baburske, Josef Lutz |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering 02 engineering and technology Insulated-gate bipolar transistor 01 natural sciences Temperature measurement Protein filament 0103 physical sciences Microscopy 0202 electrical engineering electronic engineering information engineering Optoelectronics Current (fluid) business Voltage |
| Zdroj: | 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2018.8393628 |
| Popis: | In this paper, we demonstrate for the first time experimentally measured current filaments in IGBTs under repetitive Short-Circuit (SC) events. These current filaments were discovered with the help of Thermo-Reflectance Microscopy (TRM). The destruction current as function of the applied collector-emitter voltage (V CE ) was determined for two differently wire-bonded 15A-1200V IGBT chips. The repetitive SC events in combination with TRM measurement indicate a wide range of non-destructive current filaments at different V CE . Similar filament formation under short-circuit conditions were observed in supporting TCAD device simulations based on multi-cell IGBT structure. These filaments have similar dimensions to the current filaments measured by TRM. |
| Databáze: | OpenAIRE |
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