| Popis: |
Molecular beam epitaxy has been used to grow single crystals of CuInSe2 epitaxially on CdS (0001) at 300 °C. Film composition, as determined from Auger spectroscopy, is within a few percent of stoichiometry in our best films, but all films show a variation in Cu concentration at the surface. Polycrystalline films deposited on fused quartz have optical absorption spectra with the same general shape as found in earlier films produced by conventional two‐source evaporation, although the value of the absorption coefficient is somewhat higher in the MBE‐produced films. Composition control is generally not yet adequate to give consistent electrical properties. |
