Electrical behavior of Au/IrO2/Si heterostructures
| Autor: | A. Garcia, Alejandro Meza Serrano, Gabriel Romero Paredes Rubio |
|---|---|
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Equivalent series resistance Condensed matter physics Silicon Analytical chemistry chemistry.chemical_element Richardson constant Schottky diode Thermionic emission Heterojunction Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Temperature measurement chemistry Voltage |
| Zdroj: | CCE |
| DOI: | 10.1109/iceee.2010.5608626 |
| Popis: | Au/IrO 2 /Si heterostructures were built. Their DC current versus temperature characteristics were experimentally obtained to get the corresponding Richardson plots. From these plots, the Richardson constant was estimated for these devices. Then, from the current-voltage plots at room temperature the series resistance, ideality factor and barrier height were obtained by applying the method proposed by Cheung for parameter extraction from the thermionic theory. The model is found to fit reasonably the electrical behavior of the heterostructures for voltages higher than O B . |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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