Silicon-on-sapphire CMOS for improved VCSEL/CMOS optoelectronic interconnects

Autor:	George J. Simonis, Ronald E. Reedy, Alyssa B. Apsel, R.A. Athale, Philippe O. Pouliquen, Z.K. Kalayjian, Andreas G. Andreou
Rok vydání:	2002
Předmět:	Materials science Silicon business.industry Silicon on insulator chemistry.chemical_element Substrate (electronics) Gallium arsenide Vertical-cavity surface-emitting laser chemistry.chemical_compound CMOS chemistry Silicon on sapphire Optoelectronics business Quantum well
Zdroj:	LEOS 2000. 2000 IEEE Annual Meeting Conference Proceedings. 13th Annual Meeting. IEEE Lasers and Electro-Optics Society 2000 Annual Meeting (Cat. No.00CH37080).
DOI:	10.1109/leos.2000.890729
Popis:	The technology of vertical-cavity surface-emitting lasers (VCSELs) as used in optoelectronic interconnects is becoming quite mature and is finding many fiber and free-space interconnect applications. The 850-nm GaAs-AlGaAs quantum well VCSEL technology is the most mature and most widely employed for fiber interconnects. Unfortunately, flip-chip bonded 850-nm VCSELs are sandwiched between the opaque complementary metal oxide semiconductor (CMOS) silicon and optoelectronic GaAs substrates, requiring GaAs substrate removal or some other additional measures to achieve successful interconnects. We discuss new Si-on-sapphire CMOS applications.
Databáze:	OpenAIRE
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