Effects of Thermal Annealing on Ta2O5 based CMOS compatible RRAM
| Autor: | Yong Chiang Ee, Kunqi Hou, Jia Rui Thong, Desmond Loy Jia Jun, Jia Min Ang, Somsubhra Chakrabarti, Mun Yin Chee, Putu Andhita Dananjaya, Wen Siang Lew |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Resistive random-access memory CMOS 0103 physical sciences Thermal Optoelectronics Operating voltage 0210 nano-technology business Nanoscopic scale Cmos compatible |
| Zdroj: | 2020 IEEE Silicon Nanoelectronics Workshop (SNW). |
| DOI: | 10.1109/snw50361.2020.9131617 |
| Popis: | In this paper, study on the thermal annealing effect is done on nanoscale W/TaO x /Pt resistive random access memory (RRAM) structure. Electrical characterization shows that device performance is improved after undergoing thermal annealing, with the cycle-to-cycle and device-to-device variability showing less variation with lower operating voltage. The device also undergoes CMOS BEoL compatible thermal budget. |
| Databáze: | OpenAIRE |
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