Impact of Zig-Zag Layer on MoS2 based Nanoribbon Gate-all-Around Field Effect Transistor
| Autor: | Anand M. Bhujade, Ganesh C. Patil, Rajesh C. Junghare |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences chemistry.chemical_compound chemistry Zigzag 0103 physical sciences Optoelectronics Field-effect transistor 0210 nano-technology business Molybdenum disulfide Layer (electronics) |
| Zdroj: | 2019 IEEE 16th India Council International Conference (INDICON). |
| DOI: | 10.1109/indicon47234.2019.9030328 |
| Popis: | In this work, the impact of number of zig-zag layers in molybdenum disulfide (MoS 2 ) based nanoribbon gate-all-around (GAA) field effect transistor (FET) has been studied comprehensively by using NanoTCAD ViDES. This analysis has been carried out using self-consistent simulation of Poisson and Schrodinger equations within the non-equilibrium Green's function platform. It has been found that, with six zig-zag layers at channel length of 10 nm, the on-state drive current (I ON ) to off-state leakage current (I OFF ) ratio is ~105 and the sub-threshold slope is ~66 mV/decade. Further, it has been found that, I ON of the MoS 2 nanoribbon GAA FET varies linearly with the number of MoS 2 zig-zag layers. In addition to this, the impact of zig-zag layers on the transfer and the output characteristics of MoS 2 nanoribbon GAA FET, the detailed scalability study of this device has also been carried out. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|