Hole Currents in Thermally Grown SiO2
| Autor: | J. F. Verwey |
|---|---|
| Rok vydání: | 1972 |
| Předmět: |
Materials science
Condensed matter physics Field (physics) business.industry Oxide General Physics and Astronomy Thermal emission Thermal conduction Exponential function Condensed Matter::Materials Science Cross section (physics) chemistry.chemical_compound Planar chemistry Optoelectronics Current (fluid) business |
| Zdroj: | Journal of Applied Physics. 43:2273-2277 |
| ISSN: | 1089-7550 0021-8979 |
| Popis: | Results are reported on the current of holes injected into thermally grown SiO2 from a planar avalanching p‐n junction. The current seems to be limited by a bulk process, viz., field‐assisted thermal emission from traps in the SiO2 (Poole‐Frenkel conduction). This mechanism accounts for the exponential dependence of the current on the field in the oxide. From the decay of the current as a function of time, a value of 6 ± 2 cm−1 was found for N0S, the concentration of hole‐trapping centers in the SiO2 times the capture cross section. |
| Databáze: | OpenAIRE |
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