Autor: |
Jonas Hamperl, Gunnar Blume, Paul Crump, M Elattar, A. Maaβdorf, David Feise, Patrick Georges, Gaëlle Lucas-Leclin, Arnim Ginolas, Philipp Albrodt, J. Fricke, Günther Tränkle, Katrin Paschke |
Rok vydání: |
2021 |
Předmět: |
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Zdroj: |
Novel In-Plane Semiconductor Lasers XX. |
DOI: |
10.1117/12.2578512 |
Popis: |
We present progress in high power GaAs-based single-pass semiconductor tapered optical amplifiers and modules tailored for coherent beam combining (CBC) in master-oscillator power-amplifier configuration. Amplifier design is first studied, by varying device geometry and epitaxial structure in 976nm devices. Epitaxial structures with large vertical near field and low wave-guiding from the active region enable higher CBC efficiency. However, changes to in-plane geometry did not improve performance. Overall, CBC of tapered amplifiers is stable, reproducible and robust, motivating next the development of 1064nm CBC-ready stand-alone sub-modules. Design, construction and test results from the pilot-series fabrication of these amplifier modules are presented. |
Databáze: |
OpenAIRE |
Externí odkaz: |
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