Field ion microscopy and atom probe microanalysis of semiconductor materials
| Autor: | G D W Smith, A Cerezo, Chris R. M. Grovenor |
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| Rok vydání: | 2020 |
| Předmět: |
inorganic chemicals
Materials science Silicon Physics::Instrumentation and Detectors technology industry and agriculture Analytical chemistry Oxide chemistry.chemical_element Substrate (electronics) Atom probe equipment and supplies complex mixtures Evaporation (deposition) Microanalysis Cadmium telluride photovoltaics law.invention stomatognathic diseases chemistry.chemical_compound chemistry law Field ion microscope |
| Popis: | Improved methods are described for the preparation of field ion microscope specimens from single-crystal silicon. High-resolution mass spectra of silicon have been obtained for the first time using the pulsed laser atom probe technique. The growth of oxide films has been examined, and controlled field evaporation has been used to observe the interface between the oxide and the silicon substrate. Preliminary experiments on the deposition of metals (Pd and Ni) on silicon have been carried out. Atom probe spectra have also been obtained for the first time from CdTe. |
| Databáze: | OpenAIRE |
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