Anomalous threshold reduction from <100> uniaxial strain for a low-threshold Ge laser
| Autor: | Birendra Dutt, Shashank Gupta, Krishna C. Saraswat, Donguk Nam, Yeji Kim, David S. Sukhdeo |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Uniaxial tension chemistry.chemical_element Germanium 02 engineering and technology 01 natural sciences law.invention Optics law 0103 physical sciences Electrical and Electronic Engineering Physical and Theoretical Chemistry Anisotropy 010302 applied physics Valence (chemistry) Condensed matter physics business.industry Doping 021001 nanoscience & nanotechnology Laser Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials chemistry Optoelectronics Direct and indirect band gaps 0210 nano-technology business |
| Zdroj: | Optics Communications. 379:32-35 |
| ISSN: | 0030-4018 |
| DOI: | 10.1016/j.optcom.2016.05.030 |
| Popis: | We theoretically investigate the effect of uniaxial strain on a Ge-on-Si laser. We predict a dramatic ~200x threshold reduction upon applying sufficient uniaxial tensile strain to Ge. This anomalous reduction is explained by how the topmost valence bands split and become anisotropic with uniaxial tensile strain. Approximately 3.2% uniaxial strain is required to achieve this anomalous threshold reduction for 1×1019 cm−3 n-type doping, and a complex interaction between strain and n-type doping is observed. Achieving this critical uniaxial strain level for the anomalous threshold reduction is dramatically more relevant to practical devices than realizing a direct band gap. |
| Databáze: | OpenAIRE |
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