Ultra-scaled Conformal Scavenging Electrode with Superior Tunability for Short-channel RMG FinFET Workfunction and all-ALD 3D-compatible ReRAM
| Autor: | K. Honda, K.-C. Lee, Hiroyuki Miyazoe, John Rozen, M. Hatanaka, T. Ando, Y. Ogawa, John Bruley, Vijay Narayanan, K. Suu, Ruqiang Bao, Eduard A. Cartier |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science business.industry 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Resistive random-access memory Stack (abstract data type) 0103 physical sciences Electrode Optoelectronics Node (circuits) 0210 nano-technology business Metal gate Layer (electronics) Scaling Voltage |
| Zdroj: | 2019 IEEE International Electron Devices Meeting (IEDM). |
| DOI: | 10.1109/iedm19573.2019.8993672 |
| Popis: | A baseline TiAl-containing ALD electrode is established, with properties in line with reported workfunction (WF) materials for scaled RMG nFETs, values below 4.6eV requiring a 25A layer. Furthermore, a novel ALD metal-compound material, MX, is shown to enable at least 10A further scaling of the electrode stack due to its superior scavenging power. It can be finely tuned by the film thickness, allowing for a remarkable 20-30meV WF delta per ALD cycle over a minimum 600meV range. The wet etchability of the electrodes makes multi-Vt and dual-WF integration possible. MX does not degrade transfer characteristics and reliability of RMG FinFETs, while the thinner nWF electrode enables reduced gate resistance, as verified down to 20nm metal gate lengths. For the first time, taking advantage of the MX compound scavenging power to control oxygen filaments, we demonstrate an all-ALD HfO 2 -based ReRAM. Forming voltages match those achieved by optimized PVD contacts, while scaling the active electrode thickness by a factor of 4x, down to 5nm. Conformality of the layers enables vertical-ReRAM architectures with reduced line resistance. We conclude the developed electrode can facilitate both logic scaling beyond the 10nm node, and 3D memory technology. |
| Databáze: | OpenAIRE |
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