Low threshold current strained lnAIGaAs/ AIGaAs quantum well lasers grown by metalorganic vapour phase epitaxy

Autor:	Piet Demeester, F. Vermaerke, P. Van Daele, Gerrit Vermeire
Rok vydání:	2005
Předmět:	Materials science business.industry Ti:sapphire laser Laser pumping Epitaxy Gallium arsenide chemistry.chemical_compound chemistry Quantum dot laser Optoelectronics Metalorganic vapour phase epitaxy business Quantum well Tunable laser
Zdroj:	Conference on Lasers and Electro-Optics Europe.
DOI:	10.1109/cleoe.1994.636728
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1cc01efc66f068ec89f3d18d872321b9 https://doi.org/10.1109/cleoe.1994.636728 Zobrazit plný text záznamu