The interaction of metals and barrier layers with fluorinated silicon oxides
| Autor: | Christoph Steinbrüchel, Sarah E. Kim |
|---|---|
| Rok vydání: | 1999 |
| Předmět: |
Materials science
Silicon Inorganic chemistry Analytical chemistry chemistry.chemical_element Chemical vapor deposition Condensed Matter Physics Electronic Optical and Magnetic Materials Barrier layer chemistry X-ray photoelectron spectroscopy Plasma-enhanced chemical vapor deposition Materials Chemistry Fluorine Electrical and Electronic Engineering Silicon oxide Layer (electronics) |
| Zdroj: | Solid-State Electronics. 43:1019-1023 |
| ISSN: | 0038-1101 |
| Popis: | Fluorinated silicon oxide (FSG) films with varying fluorine (F) content were prepared by plasma-enhanced chemical vapor deposition (PECVD) using TEOS, O2, and either C2F6 or NF3. Metal films (Al, Cu–1% Al, Cu) were deposited on the FSG either directly or with a barrier layer (Ta, TaN) between the metal and the FSG. In addition, undoped PECVD SiO2 was studied as a capping layer on the FSG. Compositional depth profiles were obtained with both XPS and nuclear reaction analysis (NRA). F diffused rapidly through Ta, TaN and Al, and reacted with Al on the top surface. On the other hand, regardless of barrier layers, Cu showed almost no reaction with F. F diffusion was also observed through PECVD SiO2. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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