Time-of-flight measurements of carrier drift mobilities in polymorphous silicon
| Autor: | G.J. Adriaenssens, P. Roca i Cabarrocas, M. Brinza |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Electron mobility
Silicon business.industry Photoconductivity Semiconductor materials Metals and Alloys Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Chemical vapor deposition Surfaces Coatings and Films Electronic Optical and Magnetic Materials Time of flight chemistry Gas pressure Materials Chemistry Optoelectronics business |
| Zdroj: | Thin Solid Films. 427:123-126 |
| ISSN: | 0040-6090 |
| Popis: | Time-of-flight transient photoconductivity measurements in polymorphous silicon samples reveal a 10-fold increase of the room temperature hole drift mobility up to 1.5×10−2 cm2 V−1 s−1 when the deposition total gas pressure is raised from 133 to 232 Pa. An accompanying increase of the electron mobility is much more modest. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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