Electrical Properties of InSb Irradiated with Fast Neutrons

Autor:	M. P. Giorgadze, V. L. Bonch-Bruevich, N. I. Kurdiani, N. V. Baramidze
Rok vydání:	1982
Předmět:	Random field Materials science Fast neutron irradiation Scattering Hall effect Charge carrier Irradiation Atomic physics Atmospheric temperature range Condensed Matter Physics Neutron temperature Electronic Optical and Magnetic Materials
Zdroj:	physica status solidi (b). 110:33-37
ISSN:	1521-3951 0370-1972
DOI:	10.1002/pssb.2221100103
Popis:	Variations are studied of the electrical properties of n- and p-InSb induced by fast neutron irradiation (fluences from 1 × 1017 to 8 × 1019 n/m2). Temperature dependences of the concentration and mobility of the charge carriers is studied by the Hall effect method in the temperature range from 77 to 300 K — both before and after irradiation. Parameters of a random field produced by disordered regions are calculated. Charge carrier scattering by a smooth random field created by disordered regions seems to be the dominant scattering mechanism after irradiation. [Russian Text Ignored].
Databáze:	OpenAIRE
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