The effects of recombination lifetime on efficiency and J–V characteristics of InxGa1−xN/GaN quantum dot intermediate band solar cell
| Autor: | Nima E. Gorji, Meisam Rezaei, Hassan Babaei, Foozieh Sohrabi, Ahmad Hosseinpour, Hossein Movla |
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| Rok vydání: | 2010 |
| Předmět: |
Theory of solar cells
Materials science integumentary system business.industry Band gap Energy conversion efficiency food and beverages Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Multiple exciton generation law Quantum dot Excited state Solar cell Optoelectronics Energy transformation business |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 42:2353-2357 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/j.physe.2010.05.014 |
| Popis: | We introduce a new third generation of solar cell structure which inserts different-sized quantum dots in the active region of a p–i–n structure. Generating an intermediate band in the bandgap of the host material makes a good overlap with a part of solar spectrum. The effect of the recombination mechanisms on efficiency and current–voltage characteristics of this intermediate band solar cell is calculated. We deduce that the increase in recombination lifetime of the excited carriers can improve the characteristics of this structure. This result can be a route which helps us to take the effect on solar cell characteristics into consideration. |
| Databáze: | OpenAIRE |
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