Efficiency enhancement of 400 nm violet LEDs utilizing island‐like GaN thick film by HVPE technology

Autor: Wen-Yueh Liu, Michael Heuken, Shyi-Ming Pan, Yih-Der Guo, Jenq-Dar Tsay, Jing-Mei Wang, Po Chun Liu, Liang-Wen Wu
Rok vydání: 2007
Předmět:
Zdroj: physica status solidi c. 4:49-52
ISSN: 1610-1642
1862-6351
DOI: 10.1002/pssc.200673566
Popis: In this study, we develop a novel way to fabricate InGaN/GaN LED chips with special shape for improving the output power. Crack-free shaped GaN islands were first prepared on c-axis sapphire substrate by using HVPE selective area growth. By doing so, GaN islands with flat top surface and inclined side faces are obtained. Then, the InGaN/GaN LED structure was grown on the top surface of the GaN island subsequently. The output powers of the p-side up and the p-side down shaped LED chip are 1.4 and 2.2 times the output power of the cubic chip, respectively. (© 2007 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
Databáze: OpenAIRE
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