Plasma-free hydrogenation of ultralow-temperature polycrystalline silicon thin-film transistors with SiNx:H as interlayer dielectric
| Autor: | Dae-won Kim, Jung Wook Lim, Yong-Hae Kim, Sun Jin Yun, Dong-Jin Park, Jaehyun Moon, Myung-Hee Lee, Choong-Heui Chung, Jin Ho Lee |
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| Rok vydání: | 2006 |
| Předmět: |
Materials science
Physics and Astronomy (miscellaneous) Passivation Silicon business.industry Annealing (metallurgy) Dangling bond Nanocrystalline silicon chemistry.chemical_element Strained silicon engineering.material Polycrystalline silicon chemistry Thin-film transistor engineering Optoelectronics business |
| Zdroj: | Applied Physics Letters. 88:073516 |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Plasma-free defect passivation is achieved on polycrystalline silicon thin-film transistors fabricated below 150°C by annealing and extracting H from SiNx:H interlayer dielectric. By annealing at 250°C without a plasma application, VT and μFE were improved from 11.5Vto3.5V and from 86cm2∕Vsto212cm2∕Vs, respectively. Improvement in performance is attributed to defect passivation by H diffusing out from SiNx:H. Dangling bonds and strained bonds can be acceptably passivated around 170°C, and 205°C, respectively. The activation energy for the diffusion of H into polycrystalline silicon was estimated to be 0.87eV. |
| Databáze: | OpenAIRE |
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