Lifetime Distribution Analysis of Stress-Induced Voiding Based on Void Nucleation and Growth in Cu/Low-$\kappa$ Interconnects
Autor: | H. Tsuchiya, S. Yokogawa |
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Rok vydání: | 2013 |
Předmět: |
Void (astronomy)
Materials science Monte Carlo method Nucleation Astrophysics::Cosmology and Extragalactic Astrophysics Dielectric Mechanics Poisson distribution Electronic Optical and Magnetic Materials symbols.namesake Statistics symbols Grain boundary Electrical and Electronic Engineering Safety Risk Reliability and Quality Scaling Weibull distribution |
Zdroj: | IEEE Transactions on Device and Materials Reliability. 13:272-276 |
ISSN: | 1558-2574 1530-4388 |
DOI: | 10.1109/tdmr.2013.2237775 |
Popis: | The lifetime distribution of stress-induced voiding with area scaling is investigated on a void nucleation and growth framework. The distribution resulting from the convolution integrals of the time to void nucleation and the time for void growth was applied to observed data. The time to void nucleation showed non-Poisson area scaling, whereas the time for void growth showed Poisson area scaling. Therefore, the area scaling effects were applied to a negative binominal distribution and a Poisson distribution, respectively. With a Monte Carlo simulation, it was found that the time for void growth will be dominant for the product-level lifetime. |
Databáze: | OpenAIRE |
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