Lifetime Distribution Analysis of Stress-Induced Voiding Based on Void Nucleation and Growth in Cu/Low-$\kappa$ Interconnects

Autor: H. Tsuchiya, S. Yokogawa
Rok vydání: 2013
Předmět:
Zdroj: IEEE Transactions on Device and Materials Reliability. 13:272-276
ISSN: 1558-2574
1530-4388
DOI: 10.1109/tdmr.2013.2237775
Popis: The lifetime distribution of stress-induced voiding with area scaling is investigated on a void nucleation and growth framework. The distribution resulting from the convolution integrals of the time to void nucleation and the time for void growth was applied to observed data. The time to void nucleation showed non-Poisson area scaling, whereas the time for void growth showed Poisson area scaling. Therefore, the area scaling effects were applied to a negative binominal distribution and a Poisson distribution, respectively. With a Monte Carlo simulation, it was found that the time for void growth will be dominant for the product-level lifetime.
Databáze: OpenAIRE