Phase modulated ellipsometry used for composition control during MBE growth of CdHgTe: An analysis of instrumental factors and an assessment of the material produced

Autor:	F. Grainger, I. K. Varga, G. Shen, P. Capper, P. J. Orders, M. A. Folkard, I. G. Gale, V. Kumar, K. Fueloop, D. Carr, R. H. Hartley, S. Barton, B. A. Johnson, D. Dutton, T. A. Steele
Rok vydání:	1996
Předmět:	business.industry Chemistry Analytical technique Phase (waves) Surface finish Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Optics Ellipsometry Materials Chemistry Surface roughness Electrical and Electronic Engineering business Molecular beam Molecular beam epitaxy
Zdroj:	Journal of Electronic Materials. 25:1521-1526
ISSN:	1543-186X 0361-5235
Popis:	We have found phase modulated ellipsometry (PME) to be a sensitive analytical technique capable of providing real time information on composition, epilayer thickness, growth rate, interdiffusion and surface roughness. To fully exploit the benefits of PME, the instrument must be carefully calibrated and the many factors affecting its performance need to be understood and allowed for. In this paper we examine how the accuracy of the determination of composition of molecular beam epitaxially grown CdHgTe alloy films is affected by misalignment of the optical components, the presence of vacuum windows, signal conditioning prior to analog to digital conversion, temperature changes, and modulator settings. We conclude by presenting results which demonstrate the quality of CdHgTe layers grown on (211)B CdZnTe and (211)B GaAs substrates using our techniques.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::1c73ff14750b83a9f50edfd368287db3 https://doi.org/10.1007/bf02655393 Zobrazit plný text záznamu Full text from SpringerLink