AlInAs/GaInAs HBT IC technology
| Autor: | Y.K. Allen, M.W. Pierce, R.F. Lohr, R.A. Metzger, William E. Stanchina, P.F. Lou, Joseph F. Jensen, David B. Rensch, R.W. Quen |
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| Rok vydání: | 1991 |
| Předmět: |
Materials science
business.industry Heterojunction bipolar transistor Bipolar junction transistor Transistor Ring oscillator Integrated circuit Cutoff frequency law.invention Gallium arsenide chemistry.chemical_compound chemistry law Optoelectronics Electrical and Electronic Engineering business Electronic circuit |
| Zdroj: | IEEE Journal of Solid-State Circuits. 26:415-421 |
| ISSN: | 0018-9200 |
| DOI: | 10.1109/4.75028 |
| Popis: | Integrated circuits (ICs) fabricated with AlGaAs/GaInAs heterojunction bipolar transistors (HBTs) lattice matched to InP substrates are described. The transistors used in this work consisted of an abrupt emitter-base junction design. A cutoff frequency and a maximum frequency of oscillation of 90 and 70 GHz, respectively, have been achieved with a 2*5- mu m/sup 2/ emitter size HBT. Current-mode logic (CML) was used to demonstrate ring oscillators, flip-flop divider circuits, and dual-modulus prescalers. The ring oscillator demonstrated a 15.8-ps gate delay, the CML flip-flop divider circuits demonstrated 24.8-GHz toggle rates, and the 4/5 and 8/9 dual-modulus prescalers consisting of 106 and 124 transistors, respectively, operated at clock rates of up to 9 GHz. > |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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